JPS6120141B2 - - Google Patents
Info
- Publication number
- JPS6120141B2 JPS6120141B2 JP58071218A JP7121883A JPS6120141B2 JP S6120141 B2 JPS6120141 B2 JP S6120141B2 JP 58071218 A JP58071218 A JP 58071218A JP 7121883 A JP7121883 A JP 7121883A JP S6120141 B2 JPS6120141 B2 JP S6120141B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- electrode wiring
- semiconductor
- wiring path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58071218A JPS5925250A (ja) | 1983-04-22 | 1983-04-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58071218A JPS5925250A (ja) | 1983-04-22 | 1983-04-22 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49114408A Division JPS5915495B2 (ja) | 1974-10-04 | 1974-10-04 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5925250A JPS5925250A (ja) | 1984-02-09 |
| JPS6120141B2 true JPS6120141B2 (en]) | 1986-05-21 |
Family
ID=13454312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58071218A Granted JPS5925250A (ja) | 1983-04-22 | 1983-04-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5925250A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03129044U (en]) * | 1990-04-11 | 1991-12-25 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63142867A (ja) * | 1986-12-05 | 1988-06-15 | Nec Corp | Ｍｉｓトランジスタ及びその製造方法 |
| JPH02138349U (en]) * | 1989-04-18 | 1990-11-19 |
-
1983
- 1983-04-22 JP JP58071218A patent/JPS5925250A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03129044U (en]) * | 1990-04-11 | 1991-12-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5925250A (ja) | 1984-02-09 |
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